Amorphous and microcrystalline semiconductor devices

Cover of: Amorphous and microcrystalline semiconductor devices |

Published by Artech House in Boston .

Written in English

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Subjects:

  • Amorphous semiconductors.,
  • Optoelectronic devices.,
  • Semiconductors.

Edition Notes

Includes bibliographical references and indexes.

Book details

Other titlesAmorphous & microcrystalline semiconductor devices
StatementJerzy Kanicki, editor.
Seriesv. 2: The Artech House materials science library, Artech House materials science library.
ContributionsKanicki, Jerzy.
Classifications
LC ClassificationsTK7871.99.A45 A45 1991
The Physical Object
Pagination2 v. :
ID Numbers
Open LibraryOL1532854M
ISBN 100890064903, 0890063796
LC Control Number91010520

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Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices (V. 2: The Artech House Materials Science Library) [Kanicki, Jerzy, Kanicki, Format: Hardcover.

Scien­ tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon. Other scientists have developed new methods for growing these thin films while yet others have developed new photovoltaic (PV) device structures with im­ proved conversion by:   A comprehensive introductory account of amorphous and microcrystalline semiconductor device physics and operating principles, for university students, engineers, managers, and scientists.

Volume 1, Optoelectronic Devices () was reviewed in the July SciTech Book Author: Jerzy Kanicki. This follow-up to the first volume presents an integrated survey of the most recent research, engineering development and commercial application of amorphous and microcrystalline semiconductor.

Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in Scien­ tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon.

Amorphous and Microcrystalline Semiconductor Devices, Volume 2: Materials and Device Physics. By (author): Jerzy Kanicki. Amorphous and Microcrystalline Semiconductor Devices, Volume 2: Materials and Device Physics. By (author This book is not available from inventory but can be printed at your request and delivered within weeks.

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation.

This book is an invaluable resource for device engineers, solid-state physicists, material scientists and Brand: Springer US. Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology provides a comprehensive overview of materials for application in thin film solar cells.

Publications - Books Book Chapters EECS Department The University of Michigan Ann Arbor, MI. 2 BOOKS 1. “Amorphous & Microcrystalline Semiconductor Devices: Optoelectronic Devices,” Jerzy Kanicki, Artech House, Inc., Boston, MA, 2.

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Hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) are recognized as being useful materials for constructing devices related to optoelectronics, such as solar cells, thin-film transistors, etc.

[, ].Several methods have been proposed for the preparation of device-grade a-Si:H and μc-Si: by: 2. PDF File: amorphous and microcrystalline semiconductor devices optoelectronic.

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Amorphous and microcrystalline semiconductor devices: optoelectronic devices. [Jerzy Kanicki;]. Nanocrystalline and microcrystalline semiconductors are playing an increasing role in many areas of technology, such as deep submicron and nanoelectronic devices, optoelectronics, photovoltaics, and chemical and biological sensing applications.

The interest in structures on this length scale stems from their large surface area; the fact that their properties can be tailored by specifying their. Given the unavoidable presence of impurities, in practice the best doped microcrystalline silicon layers are obtained at temperatures down to °C.

The optimum deposition temperature for doped layers in a solar-cell device with a high temperature, high deposition rate i. Devices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors.

However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline). Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in Scien­ tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline : Ruud E.I.

Schropp, Miro Zeman. Amorphous silicon (a-Si:H) is a very attractive material for large-area thin-film electronics, namely as thin-film transistors for flat panel displays, as color sensors, or as the absorbing layer for solar cells. The main advantages of this material are the low deposition temperature that offers the use of glass and flexible substrates, the potential for tuning the energy bandgap (– eV.

Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are.

a-Si a-Si:H film a-Si:H layer a-Si:H TFT active matrix alloy Amorphous Silicon annealing Appl Phys applications atoms band gap band tail bias capacitance capacitor Cat-CVD channel length charge Chemical Vapor Deposition circuit conduction band contact resistance crystalline dangling bonds data line density device display doping drain effect 5/5(1).

ZnSnN2 (ZTN), an earth-abundant element semiconductor, is a potential candidate for photovoltaic applications. However, the excessively high n-type carrier concentration caused by intrinsic defects hinders its progress. In this work, a series of Zn1±xSnN2 thin films are fabricated by RF-magnetron sputtering deposition.

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Stutzmann, T. Searle. () Data on hydrogen in a-Si:H from IR and Raman spectroscopy, Properties of amorphous silicon and its alloys. 3) W. Fuhs, J. Kanicki. () Electronic properties of amorphous silicon (a-Si:H), Amorphous and microcrystalline semiconductor devices.

4)Cited by: (Amorphous and Microcrystalline Semiconductor Devices,)Ch13 Resonant Tunneling,Hot Electron Generation and Random Telegraphic Noise in Amorphous Author: H.

Hwang and Y. Jiang. Tasks in device modeling: • Development of new models to accurately describe material properties, interfaces and device operation Æup-dating.

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The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on.

A method for manufacturing a semiconductor device and a display device each including a thin film transistor which has excellent electric characteristics and high reliability, with high mass productivity.

In a display device which includes a channel-etch inversely-staggered thin film transistor in which a microcrystalline semiconductor layer is used for a channel formation region, the.

Physics of Modern Materials: Magnetic, Electrical and Optical Properties of Crystalline and Amorphous Materials v. 2 by International Atomic Energy Agency and a great selection of related books, art and collectibles available now at   Book Search tips Selecting this option will search all publications across the Scitation platform Selecting this option will search all publications for the Barrier-controlled carrier transport in microcrystalline semiconducting materials: Description within a unified model in Amorphous and Microcrystalline Semiconductor Devices, Vol Cited by: Amorphous and Microcrystalline Silicon Solar Cells Preprint April • NREL/CP S.

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Amorphous silicon (a-Si) has been used as a photovoltaic solar cell material for devices which require very little power, such as pocket calculators, because their lower performance compared to conventional crystalline silicon (c-Si) solar cells is more than offset by their simplified and lower cost of deposition onto a substrate.

Numerical Simulation of Submicron Semiconductor Devices by Kazutaka Tamizawa,available at Book Depository with free delivery worldwide.5/5(2).

Amorphous silicon, semiconductor X-ray converter detectors for protein crystallography. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol.

Issue. 1, by: @article{osti_, title = {Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets}, author = {Moustakas, Theodore D and Maruska, H Paul}, abstractNote = {A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N.

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The review gives the introductory information on metastable light-induced degradation of amorphous silicon called the Staebler-Wronski effect (SWE). The paper highlights some recent developments in our understanding of the effect as well as some successes in reducing the SWE.

The latest results of the author’s experiments on the metastable effects and the degradation in thin film transistors. Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology: Ruud E.I.

Schropp, Miro Zeman: Books. Near the stoichiometric ratio, amorphous ZTN (a-ZTN) thin films are fabricated, and the n-type carrier concentration is suppressed to cm–3. With an increase in the Zn/Sn ratio from tothe n-type carrier concentration can be tuned in the range – cm–3, accompanied by the phase-transition from a-ZTN to microcrystalline.Nanocrystalline silicon (nc-Si), sometimes also known as microcrystalline silicon (μc-Si), is a form of porous silicon.

It is an allotropic form of silicon with paracrystalline structure—is similar to amorphous silicon (a-Si), in that it has an amorphous phase.

Where they differ, however, is that nc-Si has small grains of crystalline silicon within the amorphous phase.A thin film transistor with favorable electric characteristics is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer which includes a microcrystalline semiconductor region and an amorphous semiconductor region, an impurity semiconductor layer, a wiring, a first oxide region provided between the microcrystalline semiconductor region and Cited by: 1.

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